Journal: Engineering and Management Science DOI: 10.32629/ems.v8i8.21594
Abstract
辐射敏感场效应晶体管（Radiation Sensitive Field-Effect Transistor，RADFETs）是通过辐照引起总剂量效应的辐射探测器。本研究在无锡中微晶圆电子有限公司的6英寸工艺线上通过7层光刻工艺制备RADFETs芯片，单个P型金属氧化物半导体场效应晶体管（PMOS）的宽长比为300 mm/50 mm，栅氧化层厚度为1000 nm。晶圆级测试的阈值电压均值为3.01 V，合格芯片的片内离散度为5%。试封装样品的初始阈值电压为3.07 V，通过1 krad(Si)的钴源照射后，阈值电压增大1.04 V，表明该器件具有良好的辐射探测功能。
Keywords
辐照探测器；PMOS；总剂量效应
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[1] 沈自才. 空间辐射环境工程[M]. 北京：中国宇航出版社. 2013.
[2] 刘文平, 刘佑宝. 硅半导体器件辐射效应及加固技术[M]. 北京：科学出版社. 2013.
[3] HOLMES-SIEDLE A. The space-charge dosimeter: general principles of a new method of radiation detection[J]Nuclear Instruments and Methods, 1974, 121(1): 169-179.
[4] KARMAKAR A, WANG J L, PRINZIE J, et al. A review of semiconductor based ionising radiation sensors used in harsh radiation environments and their applications[J]. Radiation, 2021, 1(3), 194.
[5] MOROZZI A, MOSCATELLI F, CROCI T, et al. TCAD modeling of surface radiation damage effects: A state-of-the-art review[J]. Front Phys, 2021, 9, 617322.
[6] ANDJELKOVIC M, SIMEVSKI A, CHEN J C, et al. A design concept for radiation hardened RADFET readout system for space applications[J], Microprocess Microsyst, 2022, 90, 104486.
[7] 陈德英, 张旭, 姜岩峰, 等. PMOS辐照检测传感器[J]. 传感器技术, 2002, 1.
[8] HUANG J, PAN B J, BAO H, et, al. A semiconductor radiation dosimeter fabricated in 8-inch process[J], J. Semicond., 2025, 46(8), 082302.
[2] 刘文平, 刘佑宝. 硅半导体器件辐射效应及加固技术[M]. 北京：科学出版社. 2013.
[3] HOLMES-SIEDLE A. The space-charge dosimeter: general principles of a new method of radiation detection[J]Nuclear Instruments and Methods, 1974, 121(1): 169-179.
[4] KARMAKAR A, WANG J L, PRINZIE J, et al. A review of semiconductor based ionising radiation sensors used in harsh radiation environments and their applications[J]. Radiation, 2021, 1(3), 194.
[5] MOROZZI A, MOSCATELLI F, CROCI T, et al. TCAD modeling of surface radiation damage effects: A state-of-the-art review[J]. Front Phys, 2021, 9, 617322.
[6] ANDJELKOVIC M, SIMEVSKI A, CHEN J C, et al. A design concept for radiation hardened RADFET readout system for space applications[J], Microprocess Microsyst, 2022, 90, 104486.
[7] 陈德英, 张旭, 姜岩峰, 等. PMOS辐照检测传感器[J]. 传感器技术, 2002, 1.
[8] HUANG J, PAN B J, BAO H, et, al. A semiconductor radiation dosimeter fabricated in 8-inch process[J], J. Semicond., 2025, 46(8), 082302.
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