Engineering Technology Development

[1] Donati, Silvano, and Tiziana Tambosso. "Single-photon detectors: From traditional PMT to solid-state SPAD-based technology." IEEE Journal of Selected Topics in Quantum Electronics 20.6 (2014): 204-211.
[2] Bronzi, Danilo, et al. "Automotive three-dimensional vision through a single-photon counting SPAD camera." IEEE Transactions on Intelligent Transportation Systems 17.3 (2015): 782-795.
[3] http://www.199it.com/archives/830345.html.
[4] Natarajan, Chandra M., Michael G. Tanner, and Robert H.Hadfield. "Superconducting nanowire single-photon detectors: physics and applications." Superconductor science and technology 25.6 (2012): 063001.
[5] Smith, Devin H., et al. "Conclusive quantum steering with superconducting transition-edge sensors." Nature communications 3.1 (2012): 1-6.
[6] Natarajan, Chandra M., et al."Quantum detector tomography of a time-multiplexed superconducting nanowire single-photon detector at telecom wavelengths." Optics express 21.1 (2013): 893-902.
[7] Bertone, Nick, Roberto Biasi, and Bruno Dion. "Overview of photon counting detectors based on CMOS processed single photon avalanche diodes (SPAD), InGaAs APDs, and novel hybrid (tube+ APD) detectors." Semiconductor Photodetectors II. Vol. 5726. International Society for Optics and Photonics, 2005.
[8] Ghioni, Massimo, et al. "Planar silicon SPADs with 200-μm diameter and 35-ps photon timing resolution." Advanced Photon Counting Techniques. Vol. 6372. International Society for Optics and Photonics, 2006.
[9] Morimoto, Kazuhiro, et al. "Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications." Optica 7.4 (2020): 346-354.
[10] Malass, Imane, et al. "Evaluation of size influence on performance figures of a single photon avalanche diode fabricated in a 180 nm standard CMOS technology." Analog Integrated Circuits and Signal Processing 89.1 (2016): 69-76.
[11] Vignetti, M. M., et al. "Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology." Solid-State Electronics 128 (2017): 163-171.
[12] Lindner, Scott, etal."A high-PDE, backside-illuminated SPAD in 65/40-nm 3D IC CMOS pixel with cascoded passive quenching and active recharge." IEEE Electron Device Letters 38.11 (2017) : 1547-1550.
[13] Bronzi, Danilo, et al. "SPAD figures of merit for photon-counting, photon-timing, and imaging applications: a review." IEEE Sensors Journal 16.1 (2015): 3-12.
[14] Moroshima, Heiji, Hajime Terakado, and Hideharu Fujii. "Zener diode with protective PN junction portions." U.S. Patent No. 4,484,206. 20 Nov. 1984.
[15] Leitner, Tomer, et al. "Measurements and simulations of low dark count rate single photon avalanche diode device in a low voltage 180-nm CMOS image sensor technology." IEEE transactions on electron devices 60.6 (2013): 1982-1988.
[16] Massari, Nicola, et al. "16.3 A 16× 16 pixels SPAD-based 128-Mb/s quantum random number generator with− 74dB light rejection ratio and− 6.7 ppm/° C bias sensitivity on temperature." 2016 IEEE International Solid-State Circuits Conference (ISSCC). IEEE, 2016.
[17] Henderson, Robert K., Justin Richardson, and Lindsay Grant. "Reduction of band-to-band tunneling in deep-submicron CMOS single photon avalanche photodiodes." International Image Sensor Workshop (IISW 2009), Bergen, Norway. 2009.
[18] Anti, Michele, et al. "Modeling of afterpulsing in single-photon avalanche diodes." Physics and Simulation of Optoelectronic Devices XIX. Vol. 7933. International Society for Optics and Photonics, 2011.
[19] You, Ziyang, et al. "μm pitch, 1 μm active diameter SPAD arrays in 130 nm CMOS imaging technology." Proc. IISW (3): 238-241.
[20] Palubiak, Darek P., and M. Jamal Deen. "CMOS SPADs: Design issues and research challenges for detectors, circuits, and arrays." IEEE Journal of Selected Topics in Quantum Electronics 20.6 (2014): 409-426.
[21] Richardson, Justin A., et al. "A 2um diameter, 9hz dark count, single photon avalanche diode in 130nm cmos technology." 2010 Proceedings of the European Solid State Device Research Conference. IEEE, 2010.
[22] Lu, Xin, et al. "A 4-μm Diameter SPAD Using Less-Doped N-Well Guard Ring in Baseline 65-nm CMOS." IEEE Transactions on Electron Devices 67.5 (2020): 2223-2225.
[23] Geist, Jon. "Quantum efficiency of the pn junction in silicon as an absolute radiometric standard." Applied optics 18.6 (1979): 760-762.
[24] Kuvås, R., and C. A. Lee. "Quasistatic approximation for semiconductor avalanches." Journal of Applied Physics 41.4 (1970): 1743-1755.
[25] Tan, S. L., D. S. Ong, and H. K. Yow. "Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes." Journal of Applied Physics 102.4 (2007): 044506.
[26] Inoue, Akito, et al. "Modeling and Analysis of Capacitive Relaxation Quenching in a Single Photon Avalanche Diode (SPAD) Applied to a CMOS Image Sensor." Sensors 20.10 (2020): 3007.
[27] Sun, Feiyang, et al. "A Simple Analytic Modeling Method for SPAD Timing Jitter Prediction." IEEE Journal of the Electron Devices Society 7 (2019): 261-267.
[28] Han, Dong, et al. "A scalable single-photon avalanche diode with improved photon detection efficiency and dark count noise." Optik (2020): 164692.
[29] Xu, Yux, Ping Xiang, and Xiaopeng Xie. "Comprehensive understanding of dark count mechanisms of single-photon avalanche diodes fabricated in deep sub-micron CMOS technologies." Solid-State Electronics 129 (2017): 168 -174.